Optical Gain in Laser Heterostructures with an Active Area Based on an InGaAs/InGaAlAs Superlattice

L. Ya. Karachinsky; I. I. Novikov; A. V. Babichev; A. G. Gladyshev; E. S. Kolodeznyi; S. S. Rochas; A. S. Kurochkin; Yu. K. Bobretsova; A. A. Klimov; D. V. Denisov; K. O. Voropaev; A. S. Ionov; V. E. Bougrov; A. Yu. Egorov

doi:10.1134/S0030400X19120099

Optical Gain in Laser Heterostructures with an Active Area Based on an InGaAs/InGaAlAs Superlattice

Autores: Karachinsky L.Y.¹, Novikov I.I.², Babichev A.V.², Gladyshev A.G.², Kolodeznyi E.S.², Rochas S.S.², Kurochkin A.S.², Bobretsova Y.K.³, Klimov A.A.³, Denisov D.V.⁴, Voropaev K.O.⁵^,6, Ionov A.S.⁶, Bougrov V.E.², Egorov A.Y.²
Afiliações:
1. Connector Optics LLC
2. ITMO University
3. Ioffe Institute, Russian Academy of Sciences
4. St. Petersburg Electrotechnical University
5. Yaroslav-the-Wise Novgorod State University
6. OKB-Planeta
Edição: Volume 127, Nº 6 (2019)
Páginas: 1053-1056
Seção: Laser Physics and Laser Optics
URL: https://ogarev-online.ru/0030-400X/article/view/166181
DOI: https://doi.org/10.1134/S0030400X19120099
ID: 166181

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An active area based on InGaAs/InGaAlAs superlattice for laser diodes operating in the spectral range between 1535 and 1565 nm is proposed and realized practically. It is demonstrated that using a superlattice increases the mode gain at the same values of the pump-diode current density relative to a typical active-area design based on an array of InGaAs quantum wells.