Spectral Sensitization of Photo-EMF in Monocrystalline Silicon
- Авторлар: Goryaev M.A.1
-
Мекемелер:
- Herzen State Pedagogical University of Russia
- Шығарылым: Том 127, № 1 (2019)
- Беттер: 167-169
- Бөлім: Optical Materials
- URL: https://ogarev-online.ru/0030-400X/article/view/166049
- DOI: https://doi.org/10.1134/S0030400X19070087
- ID: 166049
Дәйексөз келтіру
Аннотация
The effect of an organic dye deposited on the surface of a semiconductor on the photo-EMF spectrum in monocrystalline silicon has been studied. Sensitization of the internal photoeffect has been found in the semiconductor in the absorption band of the dye. An optimal concentration of the dye on the semiconductor surface that corresponds to a dye film thickness of 10–15 nm has been determined. The mechanism of sensitization is discussed on the basis of the theory of nonradiative inductive-resonant energy transfer from the dye to the semiconductor.
Негізгі сөздер
Авторлар туралы
M. Goryaev
Herzen State Pedagogical University of Russia
Хат алмасуға жауапты Автор.
Email: mgoryaev@mail.ru
Ресей, St. Petersburg, 191186
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