Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films
- Авторы: Novikova N.N.1, Yakovlev V.A.1, Klimin S.A.1, Malin T.V.2, Gilinsky A.M.2, Zhuravlev K.S.2,3
-
Учреждения:
- Institute of Spectroscopy, Russian Academy of Sciences
- Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences
- Novosibirsk State University
- Выпуск: Том 127, № 1 (2019)
- Страницы: 36-39
- Раздел: Spectroscopy of Condensed States
- URL: https://ogarev-online.ru/0030-400X/article/view/166033
- DOI: https://doi.org/10.1134/S0030400X19070208
- ID: 166033
Цитировать
Аннотация
The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.
Об авторах
N. Novikova
Institute of Spectroscopy, Russian Academy of Sciences
Email: klimin@isan.troitsk.ru
Россия, MoscowTroitsk, 108840
V. Yakovlev
Institute of Spectroscopy, Russian Academy of Sciences
Email: klimin@isan.troitsk.ru
Россия, MoscowTroitsk, 108840
S. Klimin
Institute of Spectroscopy, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: klimin@isan.troitsk.ru
Россия, MoscowTroitsk, 108840
T. Malin
Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences
Email: klimin@isan.troitsk.ru
Россия, Novosibirsk, 630090
A. Gilinsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences
Email: klimin@isan.troitsk.ru
Россия, Novosibirsk, 630090
K. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences; Novosibirsk State University
Email: klimin@isan.troitsk.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
Дополнительные файлы
