Dislocation contribution to hysteresis mechanism of internal friction at homological temperatures below 0.2
- Авторлар: Gorshkov A.A.1, Korovaitseva E.A.2, Lomovskoi V.A.1
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Мекемелер:
- Moscow Technological University
- Institute of Mechanics
- Шығарылым: Том 52, № 2 (2017)
- Беттер: 184-194
- Бөлім: Article
- URL: https://ogarev-online.ru/0025-6544/article/view/162919
- DOI: https://doi.org/10.3103/S002565441702008X
- ID: 162919
Дәйексөз келтіру
Аннотация
The computations of the internal friction background arising due to the hysteresis mechanism of dislocation mobility in metallic systems at low temperatures carried out by different model representations are presented. It is shown that the general background of internal friction contains not only the losses due to hysteresis mechanism of oscillatory motions but also the losses due to other mechanisms of the structure defect mobility.
Негізгі сөздер
Авторлар туралы
A. Gorshkov
Moscow Technological University
Хат алмасуға жауапты Автор.
Email: ag60341@gmail.com
Ресей, pr. Vernadskogo 78, Moscow, 119454
E. Korovaitseva
Institute of Mechanics
Email: ag60341@gmail.com
Ресей, Michurinskii pr. 1, Moscow, 119192
V. Lomovskoi
Moscow Technological University
Email: ag60341@gmail.com
Ресей, pr. Vernadskogo 78, Moscow, 119454
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