Quantum corrections to the conductivity and anisotropy of the magnetoresistance in Eu-doped Bi2Se3 thin films
- 作者: Oveshnikov L.N.1,2, Prudkoglyad V.A.2, Selivanov Y.G.2, Chizhevskii E.G.2, Aronzon B.A.1,2
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隶属关系:
- National Research Center Kurchatov Institute
- Lebedev Physical Institute
- 期: 卷 106, 编号 8 (2017)
- 页面: 526-533
- 栏目: Condensed Matter
- URL: https://ogarev-online.ru/0021-3640/article/view/160658
- DOI: https://doi.org/10.1134/S0021364017200103
- ID: 160658
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详细
The magnetotransport in Bi2Se3 thin films with magnetic Eu dopants is studied within the range of low applied magnetic fields. With the increase in the doping level, the saturation of the dephasing length on cooling is observed. This can be related to the existence of magnetic inclusions. The observed anisotropy of the magnetoresistance is qualitatively similar to the anisotropy characteristic of nonmagnetic Bi2Se3 films. Numerous similarities to the properties of pure Bi2Se3 films and some observed differences can be interpreted under the assumption of the local interaction of topologically nontrivial interface states with Eu-rich inclusions.
作者简介
L. Oveshnikov
National Research Center Kurchatov Institute; Lebedev Physical Institute
编辑信件的主要联系方式.
Email: Oveshln@gmail.com
俄罗斯联邦, Moscow, 123182; Moscow, 119991
V. Prudkoglyad
Lebedev Physical Institute
Email: Oveshln@gmail.com
俄罗斯联邦, Moscow, 119991
Yu. Selivanov
Lebedev Physical Institute
Email: Oveshln@gmail.com
俄罗斯联邦, Moscow, 119991
E. Chizhevskii
Lebedev Physical Institute
Email: Oveshln@gmail.com
俄罗斯联邦, Moscow, 119991
B. Aronzon
National Research Center Kurchatov Institute; Lebedev Physical Institute
Email: Oveshln@gmail.com
俄罗斯联邦, Moscow, 123182; Moscow, 119991
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