Quantum corrections to the conductivity and anisotropy of the magnetoresistance in Eu-doped Bi2Se3 thin films

Abstract

The magnetotransport in Bi₂Se₃ thin films with magnetic Eu dopants is studied within the range of low applied magnetic fields. With the increase in the doping level, the saturation of the dephasing length on cooling is observed. This can be related to the existence of magnetic inclusions. The observed anisotropy of the magnetoresistance is qualitatively similar to the anisotropy characteristic of nonmagnetic Bi₂Se₃ films. Numerous similarities to the properties of pure Bi₂Se₃ films and some observed differences can be interpreted under the assumption of the local interaction of topologically nontrivial interface states with Eu-rich inclusions.