Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion
- 作者: Kononov A.1, Egorov S.V.1, Kostarev V.A.1, Semyagin B.R.2, Preobrazhenskii V.V.2, Putyato M.A.2, Emelyanov E.A.2, Deviatov E.V.1
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隶属关系:
- Institute of Solid State Physics
- Institute of Semiconductor Physics
- 期: 卷 104, 编号 1 (2016)
- 页面: 26-31
- 栏目: Condensed Matter
- URL: https://ogarev-online.ru/0021-3640/article/view/159287
- DOI: https://doi.org/10.1134/S0021364016130014
- ID: 159287
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详细
We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transport regimes can be achieved by variation of the mesa step. We observe anomalous behavior of Andreev reflection within a finite low-bias interval, which is invariant for both transport regimes. We connect this behavior with the transition from retro-(at low biases) to specular (at high ones) Andreev reflection channels in an InAs/GaSb double quantum well with band inversion.
作者简介
A. Kononov
Institute of Solid State Physics
Email: dev@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432
S. Egorov
Institute of Solid State Physics
Email: dev@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432
V. Kostarev
Institute of Solid State Physics
Email: dev@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432
B. Semyagin
Institute of Semiconductor Physics
Email: dev@issp.ac.ru
俄罗斯联邦, Novosibirsk, 630090
V. Preobrazhenskii
Institute of Semiconductor Physics
Email: dev@issp.ac.ru
俄罗斯联邦, Novosibirsk, 630090
M. Putyato
Institute of Semiconductor Physics
Email: dev@issp.ac.ru
俄罗斯联邦, Novosibirsk, 630090
E. Emelyanov
Institute of Semiconductor Physics
Email: dev@issp.ac.ru
俄罗斯联邦, Novosibirsk, 630090
E. Deviatov
Institute of Solid State Physics
编辑信件的主要联系方式.
Email: dev@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432
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