Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion


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Abstract

We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transport regimes can be achieved by variation of the mesa step. We observe anomalous behavior of Andreev reflection within a finite low-bias interval, which is invariant for both transport regimes. We connect this behavior with the transition from retro-(at low biases) to specular (at high ones) Andreev reflection channels in an InAs/GaSb double quantum well with band inversion.

About the authors

A. Kononov

Institute of Solid State Physics

Email: dev@issp.ac.ru
Russian Federation, Chernogolovka, Moscow region, 142432

S. V. Egorov

Institute of Solid State Physics

Email: dev@issp.ac.ru
Russian Federation, Chernogolovka, Moscow region, 142432

V. A. Kostarev

Institute of Solid State Physics

Email: dev@issp.ac.ru
Russian Federation, Chernogolovka, Moscow region, 142432

B. R. Semyagin

Institute of Semiconductor Physics

Email: dev@issp.ac.ru
Russian Federation, Novosibirsk, 630090

V. V. Preobrazhenskii

Institute of Semiconductor Physics

Email: dev@issp.ac.ru
Russian Federation, Novosibirsk, 630090

M. A. Putyato

Institute of Semiconductor Physics

Email: dev@issp.ac.ru
Russian Federation, Novosibirsk, 630090

E. A. Emelyanov

Institute of Semiconductor Physics

Email: dev@issp.ac.ru
Russian Federation, Novosibirsk, 630090

E. V. Deviatov

Institute of Solid State Physics

Author for correspondence.
Email: dev@issp.ac.ru
Russian Federation, Chernogolovka, Moscow region, 142432

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