Enviar artigo por via de e-mail Edge absorption and circular photogalvanic effect in 2D topological insulator edges
- Autores: Entin M.V.1,2, Magarill L.I.1,2
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Edição: Volume 103, Nº 11 (2016)
- Páginas: 711-716
- Seção: Condensed Matter
- URL: https://ogarev-online.ru/0021-3640/article/view/159428
- DOI: https://doi.org/10.1134/S0021364016110047
- ID: 159428
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Resumo
The electron absorption on the edge states and the edge photocurrent of a 2D topological insulator (TI) are studied. We consider the optical transitions within linear edge branches of the energy spectrum. The interaction with impurities is taken into account. The circular polarization is found to produce the edge photocurrent, the direction of which is determined by light polarization and edge orientation.
Sobre autores
M. Entin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Autor responsável pela correspondência
Email: entin@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
L. Magarill
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: entin@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
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