Edge absorption and circular photogalvanic effect in 2D topological insulator edges
- Авторлар: Entin M.V.1,2, Magarill L.I.1,2
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Шығарылым: Том 103, № 11 (2016)
- Беттер: 711-716
- Бөлім: Condensed Matter
- URL: https://ogarev-online.ru/0021-3640/article/view/159428
- DOI: https://doi.org/10.1134/S0021364016110047
- ID: 159428
Дәйексөз келтіру
Аннотация
The electron absorption on the edge states and the edge photocurrent of a 2D topological insulator (TI) are studied. We consider the optical transitions within linear edge branches of the energy spectrum. The interaction with impurities is taken into account. The circular polarization is found to produce the edge photocurrent, the direction of which is determined by light polarization and edge orientation.
Авторлар туралы
M. Entin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Хат алмасуға жауапты Автор.
Email: entin@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
L. Magarill
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: entin@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
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