Semiconductor Nanoparticle in an Electric Field
- Авторлар: Kozhushner M.A.1, Lidskii B.V.1, Posvyanskii V.S.1, Trakhtenberg L.I.1,2
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Мекемелер:
- Semenov Institute of Chemical Physics
- Karpov Research Institute of Physical Chemistry
- Шығарылым: Том 108, № 9 (2018)
- Беттер: 637-640
- Бөлім: Miscellaneous
- URL: https://ogarev-online.ru/0021-3640/article/view/161395
- DOI: https://doi.org/10.1134/S0021364018210075
- ID: 161395
Дәйексөз келтіру
Аннотация
The distributions of electrons and positive charges within a spherical semiconductor nanoparticle with surface electron traps in a uniform applied electric field are studied. The minimization of the total free energy gives the resulting effective electric field, which depends on the densities of donors and surface traps, as well as on the distance from the center of the nanoparticle. It is shown that the near-surface field at a relatively low donor density in the region of its entrance to the nanoparticle significantly differs from that in the region of its departure from the nanoparticle. The induced dipole moment of the nanoparticle is calculated and different contributions to it are determined. The ranges of applicability of the results are indicated.
Авторлар туралы
M. Kozhushner
Semenov Institute of Chemical Physics
Хат алмасуға жауапты Автор.
Email: kozhushner@gmail.com
Ресей, Moscow, 119991
B. Lidskii
Semenov Institute of Chemical Physics
Email: kozhushner@gmail.com
Ресей, Moscow, 119991
V. Posvyanskii
Semenov Institute of Chemical Physics
Email: kozhushner@gmail.com
Ресей, Moscow, 119991
L. Trakhtenberg
Semenov Institute of Chemical Physics; Karpov Research Institute of Physical Chemistry
Email: kozhushner@gmail.com
Ресей, Moscow, 119991; Moscow, 105064
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