Classical Effects in the Weak-Field Magnetoresistance of InGaAs/InAlAs Quantum Wells


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We observe an unusual behavior of the low-temperature magnetoresistance of the high-mobility two-dimensional electron gas in InGaAs/InAlAs quantum wells in weak perpendicular magnetic fields. The observed magnetoresistance is qualitatively similar to that expected for the weak localization and antilocalization but its quantity exceeds significantly the scale of the quantum corrections. The calculations show that the obtained data can be explained by the classical effects in electron motion along the open orbits in a quasiperiodic potential relief manifested by the presence of ridges on the quantum well surface.

作者简介

M. Melnikov

Institute of Solid State Physics

Email: shashkin@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432

A. Shashkin

Institute of Solid State Physics

编辑信件的主要联系方式.
Email: shashkin@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432

V. Dolgopolov

Institute of Solid State Physics

Email: shashkin@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432

G. Biasiol

IOM CNR

Email: shashkin@issp.ac.ru
意大利, Trieste, 34149

S. Roddaro

NEST

Email: shashkin@issp.ac.ru
意大利, Pisa, 56127

L. Sorba

NEST

Email: shashkin@issp.ac.ru
意大利, Pisa, 56127

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