Premelting generation of interstitial defects in polycrystalline indium

E. V. Goncharova; A. S. Makarov; R. A. Konchakov; N. P. Kobelev; V. A. Khonik

doi:10.1134/S0021364017130070

Premelting generation of interstitial defects in polycrystalline indium

作者: Goncharova E.V.¹, Makarov A.S.¹, Konchakov R.A.¹, Kobelev N.P.², Khonik V.A.¹
隶属关系:
1. Voronezh State Pedagogical University
2. Institute of Solid State Physics
期: 卷 106, 编号 1 (2017)
页面: 35-39
栏目: Condensed Matter
URL: https://ogarev-online.ru/0021-3640/article/view/160419
DOI: https://doi.org/10.1134/S0021364017130070
ID: 160419

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

High-precision measurements of the shear modulus of polycrystalline indium from room temperature to the melting temperature T_m and molecular statics computer simulation have been performed. It has been found that interstitial defects are intensely generated near T_m in a dumbbell (split) configuration and their concentration can exceed the concentration of vacancies.