Email this article Electronic and transport properties of heterophase compounds based on MoS2
- Authors: Kvashnin D.G.1,2, Chernozatonskii L.A.1
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Affiliations:
- Emanuel Institute of Biochemical Physics
- National University of Science and Technology MISiS
- Issue: Vol 105, No 4 (2017)
- Pages: 250-254
- Section: Condensed Matter
- URL: https://ogarev-online.ru/0021-3640/article/view/160111
- DOI: https://doi.org/10.1134/S0021364017040117
- ID: 160111
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Abstract
New heterophase superlattices based on MoS2 are studied in detail by the electron density functional theory. It is shown that the incorporation of the 1Т phase in the 2H-MoS2 monolayer is responsible for the formation of electronic levels near the Fermi level and quantum wells in the transverse direction of superlattices. The proposed lateral heterophase structures of transition metal dichalcogenides are promising for the construction of new elements of nanoelectronics.
About the authors
D. G. Kvashnin
Emanuel Institute of Biochemical Physics; National University of Science and Technology MISiS
Author for correspondence.
Email: dgkvashnin@gmail.com
Russian Federation, Moscow, 119334; Moscow, 119049
L. A. Chernozatonskii
Emanuel Institute of Biochemical Physics
Email: dgkvashnin@gmail.com
Russian Federation, Moscow, 119334
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