A Method for Reducing the Threshold Dose of Irradiation with Hydrogen Ions for Forming Blisters in Silicon

Abstract

We consider the conditions for reducing the threshold dose of radiation-gas splitting of a silicon single crystal by using a fixed-energy two-stage irradiation with hydrogen ions in a single production cycle. It has been experimentally established that a well-developed blister structure is formed in a sample in the mode of its two-stage irradiation with hydrogen ions with E = 12.5 keV and a dose of 0.5 × 10¹⁶ cm^–2 at a normal angle of incidence at the first stage and, then, with a dose of 1.0 × 10¹⁶ cm⁻² at an angle of 32° at the second stage (the total dose is 1.5 × 10¹⁶ cm^–2). This structure is similar to the structure in a sample irradiated in the mode of single-stage irradiation to a dose of 5 × 10¹⁶ cm^–2. This fact is the indication that the conditions for more than a threefold decrease in the threshold for the formation of hydrogen blisters in silicon upon twostage irradiation with monoenergetic hydrogen ions in a single production cycle.