An Automated Measuring System for Current Deep-Level Transient Spectroscopy
- Authors: Ermachikhin A.V.1, Litvinov V.G.1
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Affiliations:
- Ryazan State Radio Engineering University
- Issue: Vol 61, No 2 (2018)
- Pages: 277-282
- Section: General Experimental Techniques
- URL: https://ogarev-online.ru/0020-4412/article/view/160168
- DOI: https://doi.org/10.1134/S0020441218020021
- ID: 160168
Cite item
Abstract
A measuring system for current deep-level transient spectroscopy of semiconductor diode structures is described. Its distinguishing feature is the ability to measure several relaxation currents (up to eight current dependences for one temperature scanning) at different regimes of deep-level recharging. The structural features of the system for measuring and analyzing the temperature dependence of the relaxation current in semiconductor structures are described.
About the authors
A. V. Ermachikhin
Ryazan State Radio Engineering University
Author for correspondence.
Email: al.erm@mail.ru
Russian Federation, Ryazan, 390005
V. G. Litvinov
Ryazan State Radio Engineering University
Email: al.erm@mail.ru
Russian Federation, Ryazan, 390005
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