An Automated Measuring System for Current Deep-Level Transient Spectroscopy


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Abstract

A measuring system for current deep-level transient spectroscopy of semiconductor diode structures is described. Its distinguishing feature is the ability to measure several relaxation currents (up to eight current dependences for one temperature scanning) at different regimes of deep-level recharging. The structural features of the system for measuring and analyzing the temperature dependence of the relaxation current in semiconductor structures are described.

About the authors

A. V. Ermachikhin

Ryazan State Radio Engineering University

Author for correspondence.
Email: al.erm@mail.ru
Russian Federation, Ryazan, 390005

V. G. Litvinov

Ryazan State Radio Engineering University

Email: al.erm@mail.ru
Russian Federation, Ryazan, 390005

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