A stabilizer of micro- and small currents based on a field hall-effect sensor with autocompensation of the temperature effect
- 作者: Leonov A.V.1, Pavlyuk M.I.2
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隶属关系:
- Institute of Microelectronic Technology and Ultra-High-Purity Materials
- JSC ICC Milandr
- 期: 卷 59, 编号 6 (2016)
- 页面: 808-809
- 栏目: Electronics and Radio Engineering
- URL: https://ogarev-online.ru/0020-4412/article/view/159369
- DOI: https://doi.org/10.1134/S0020441216060026
- ID: 159369
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详细
A stabilizer of micro- and small currents based on a field Hall-effect sensor is considered. The field-effect Hall sensor is an integration of a conventional Si Hall element and an Si thin-film doublegate field-effect transistor. It is shown that formation of feedbacks between Hall contacts, field gates, and power sources makes it possible to stabilize the sensor current with accuracy of not worse than 1% when the load resistance changes by an order and the temperature varies in the 25–65°C range.
作者简介
A. Leonov
Institute of Microelectronic Technology and Ultra-High-Purity Materials
编辑信件的主要联系方式.
Email: alex25.08@mail.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
M. Pavlyuk
JSC ICC Milandr
Email: alex25.08@mail.ru
俄罗斯联邦, Zelenograd, Moscow, 124498
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