A stabilizer of micro- and small currents based on a field hall-effect sensor with autocompensation of the temperature effect


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A stabilizer of micro- and small currents based on a field Hall-effect sensor is considered. The field-effect Hall sensor is an integration of a conventional Si Hall element and an Si thin-film doublegate field-effect transistor. It is shown that formation of feedbacks between Hall contacts, field gates, and power sources makes it possible to stabilize the sensor current with accuracy of not worse than 1% when the load resistance changes by an order and the temperature varies in the 25–65°C range.

作者简介

A. Leonov

Institute of Microelectronic Technology and Ultra-High-Purity Materials

编辑信件的主要联系方式.
Email: alex25.08@mail.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432

M. Pavlyuk

JSC ICC Milandr

Email: alex25.08@mail.ru
俄罗斯联邦, Zelenograd, Moscow, 124498

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