A device for free-carrier recombination lifetime measurements
- Authors: Kobeleva S.P.1, Anfimov I.M.1, Schemerov I.V.1
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Affiliations:
- National University of Science and Technology MISiS
- Issue: Vol 59, No 3 (2016)
- Pages: 420-424
- Section: General Experimental Techniques
- URL: https://ogarev-online.ru/0020-4412/article/view/159080
- DOI: https://doi.org/10.1134/S0020441216030064
- ID: 159080
Cite item
Abstract
The design of a microwave system, the user interface, and the basic characteristics of noncontact equipment for measuring the recombination lifetime of free charge carriers in semiconductor materials by the photoconductivity-decay method are described. The features of the microwave-system design eliminate the need for a microwave circulator and other expensive elements of the systems without a loss in the equipment sensitivity. This substantially simplifies the design and provides automated measurements of the free-carrier lifetime in silicon single crystals in a range of 0.2 μs to tens of milliseconds. The upper measurement limit is determined by the geometrical dimensions of a sample and the surface treatment quality. The results of measuring the photoconductivity relaxation time in reference single-crystal silicon samples are presented.
About the authors
S. P. Kobeleva
National University of Science and Technology MISiS
Author for correspondence.
Email: kob@misis.ru
Russian Federation, Leninskii pr. 4, Moscow, 119049
I. M. Anfimov
National University of Science and Technology MISiS
Email: kob@misis.ru
Russian Federation, Leninskii pr. 4, Moscow, 119049
I. V. Schemerov
National University of Science and Technology MISiS
Email: kob@misis.ru
Russian Federation, Leninskii pr. 4, Moscow, 119049
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