Investigation of high-voltage integral pulse thyristors in single-pulse and pulse-train modes
- 作者: Grekhov I.V.1, Zhmodikov A.L.1, Korotkov S.V.1, Prizhimnov S.G.1, Fomenko Y.L.1
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隶属关系:
- Ioffe Physical Technical Institute
- 期: 卷 59, 编号 3 (2016)
- 页面: 351-355
- 栏目: Electronics and Radio Engineering
- URL: https://ogarev-online.ru/0020-4412/article/view/159028
- DOI: https://doi.org/10.1134/S0020441216020202
- ID: 159028
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详细
The results of studying the switching capabilities of recently developed high-voltage integral pulse thyristors (HIPTs) with a working area of 0.45 cm2 and an operating voltage of 3 kV are presented. A silicon chip of a thyristor consists of a large number of microthyristor cells that are enabled strictly synchronously with a control-current pulse, thus providing low switching energy losses and allowing a current of up to 8 kA at a pulse duration of 1.5 μs to be switched within 500 ns in a single-pulse mode. The HIPT switching-off time is several microseconds when, after a power-current pulse terminates, a field-effect transistor with a low (tens of milliohms) channel resistance closes the emitter–base circuit. The low switching energy loss and the short switching-off time made it possible to use HIPTs in the mode of switching current pulses with an amplitude of 500 А at a frequency of 50 kHz.
作者简介
I. Grekhov
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: grekhov@mail.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Zhmodikov
Ioffe Physical Technical Institute
Email: korotkov@mail.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
S. Korotkov
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: korotkov@mail.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
S. Prizhimnov
Ioffe Physical Technical Institute
Email: korotkov@mail.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
Yu. Fomenko
Ioffe Physical Technical Institute
Email: korotkov@mail.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
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