Investigation of high-voltage integral pulse thyristors in single-pulse and pulse-train modes


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The results of studying the switching capabilities of recently developed high-voltage integral pulse thyristors (HIPTs) with a working area of 0.45 cm2 and an operating voltage of 3 kV are presented. A silicon chip of a thyristor consists of a large number of microthyristor cells that are enabled strictly synchronously with a control-current pulse, thus providing low switching energy losses and allowing a current of up to 8 kA at a pulse duration of 1.5 μs to be switched within 500 ns in a single-pulse mode. The HIPT switching-off time is several microseconds when, after a power-current pulse terminates, a field-effect transistor with a low (tens of milliohms) channel resistance closes the emitter–base circuit. The low switching energy loss and the short switching-off time made it possible to use HIPTs in the mode of switching current pulses with an amplitude of 500 А at a frequency of 50 kHz.

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I. Grekhov

Ioffe Physical Technical Institute

编辑信件的主要联系方式.
Email: grekhov@mail.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021

A. Zhmodikov

Ioffe Physical Technical Institute

Email: korotkov@mail.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021

S. Korotkov

Ioffe Physical Technical Institute

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Email: korotkov@mail.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021

S. Prizhimnov

Ioffe Physical Technical Institute

Email: korotkov@mail.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021

Yu. Fomenko

Ioffe Physical Technical Institute

Email: korotkov@mail.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021

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