Hybrid Microwave-DC Discharge in Nitrogen at Reduced Pressures
- Autores: Lebedev Y.A.1, Krashevskaya G.V.1,2, Titov A.Y.1, Epstein I.L.1
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Afiliações:
- Topchiev Institute of Petrochemical Synthesis of the Russian Academy of Sciences (TIPS RAS)
- National Nuclear Research University MEPhI
- Edição: Volume 57, Nº 5 (2019)
- Páginas: 621-627
- Seção: Plasma Investigations
- URL: https://ogarev-online.ru/0018-151X/article/view/158058
- DOI: https://doi.org/10.1134/S0018151X19050109
- ID: 158058
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Resumo
The hybrid nonuniform microwave-DC discharge in nitrogen at pressure 1–15 Torr is studied by the method optical emission spectroscopy with spatial resolution. Discharge is ignited between the microwave powered antenna and grounded disk electrode placed at the distance of 2.5 cm from antenna. Antenna was positively biased relative to the grounded electrode. The ratio of the intensities of the nitrogen band at 337 nm and the emission of the ion band at 391 nm is used to determine the microwave field strength. Second positive system of nitrogen emission prevails over others in near antenna region. Emission of the first negative nitrogen ion system has the highest intensity near flat electrode. The vibrational distributions of nitrogen molecules and their dependence on direct current and position between antenna and grounded electrode are determined.
Sobre autores
Yu. Lebedev
Topchiev Institute of Petrochemical Synthesis of the Russian Academy of Sciences (TIPS RAS)
Autor responsável pela correspondência
Email: lebedev@ips.ac.ru
Rússia, Moscow, 119991
G. Krashevskaya
Topchiev Institute of Petrochemical Synthesis of the Russian Academy of Sciences (TIPS RAS); National Nuclear Research University MEPhI
Email: lebedev@ips.ac.ru
Rússia, Moscow, 119991; Moscow, 115409
A. Titov
Topchiev Institute of Petrochemical Synthesis of the Russian Academy of Sciences (TIPS RAS)
Email: lebedev@ips.ac.ru
Rússia, Moscow, 119991
I. Epstein
Topchiev Institute of Petrochemical Synthesis of the Russian Academy of Sciences (TIPS RAS)
Email: lebedev@ips.ac.ru
Rússia, Moscow, 119991
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