Radiation Sensitivity Modeling Technique of Sensors’ Mis-Transistor Elements
- 作者: Podlepetsky B.I.1, Bakerenkov A.S.1, Sukhoroslova Y.V.1
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隶属关系:
- National Research Nuclear University MEPhI
- 期: 卷 79, 编号 1 (2018)
- 页面: 180-189
- 栏目: Sensors and Systems
- URL: https://ogarev-online.ru/0005-1179/article/view/150777
- DOI: https://doi.org/10.1134/S0005117918010150
- ID: 150777
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详细
The technique of estimating the parameters models of MISTs (the field-effect transistors with metal-insulator-semiconductor structures) is proposed to predict the radiation sensitivity of the sensors based on MISTs. The technique allows distinguishing the contributions of charges in the insulator and the surface states, taking into account the effect of irradiation modes on the transistor characteristics.
作者简介
B. Podlepetsky
National Research Nuclear University MEPhI
编辑信件的主要联系方式.
Email: bipod45@gmail.com
俄罗斯联邦, Moscow
A. Bakerenkov
National Research Nuclear University MEPhI
Email: bipod45@gmail.com
俄罗斯联邦, Moscow
Yu. Sukhoroslova
National Research Nuclear University MEPhI
Email: bipod45@gmail.com
俄罗斯联邦, Moscow
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