Radiation Sensitivity Modeling Technique of Sensors’ Mis-Transistor Elements


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详细

The technique of estimating the parameters models of MISTs (the field-effect transistors with metal-insulator-semiconductor structures) is proposed to predict the radiation sensitivity of the sensors based on MISTs. The technique allows distinguishing the contributions of charges in the insulator and the surface states, taking into account the effect of irradiation modes on the transistor characteristics.

作者简介

B. Podlepetsky

National Research Nuclear University MEPhI

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Email: bipod45@gmail.com
俄罗斯联邦, Moscow

A. Bakerenkov

National Research Nuclear University MEPhI

Email: bipod45@gmail.com
俄罗斯联邦, Moscow

Yu. Sukhoroslova

National Research Nuclear University MEPhI

Email: bipod45@gmail.com
俄罗斯联邦, Moscow

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