High Density Boron Carbide Ceramics


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Аннотация

Porous preforms of B4C + C and B4C + C + Si materials were impregnated by liquid (molten) silicon to obtain high-density product with a relative density of 99.0 % and porosity of 0.9%. Silicon impregnation was carried out by saturating the samples through the pores of the SiC + C sacrificial preforms. This method allows to reduce both the dissolution of boron carbide grains in the silicon solution and the formation of the B12(C, Si, B)3 phase. This reduces the fragility of the product and thereby improves the mechanical characteristics of the B4C ceramics.

Авторлар туралы

S. Perevislov

St. Petersburg State Technological Institute (technical university)

Хат алмасуға жауапты Автор.
Email: perevislov@mail.ru
Ресей, St. Petersburg

P. Shcherbak

St. Petersburg State Technological Institute (technical university)

Email: perevislov@mail.ru
Ресей, St. Petersburg

M. Tomkovich

Ioffe Physical-Technical Institute of the Russian Academy of Sciences

Email: perevislov@mail.ru
Ресей, St. Petersburg

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