High Density Boron Carbide Ceramics
- Авторлар: Perevislov S.N.1, Shcherbak P.V.1, Tomkovich M.V.2
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Мекемелер:
- St. Petersburg State Technological Institute (technical university)
- Ioffe Physical-Technical Institute of the Russian Academy of Sciences
- Шығарылым: Том 59, № 1 (2018)
- Беттер: 32-36
- Бөлім: Article
- URL: https://ogarev-online.ru/1083-4877/article/view/248978
- DOI: https://doi.org/10.1007/s11148-018-0178-4
- ID: 248978
Дәйексөз келтіру
Аннотация
Porous preforms of B4C + C and B4C + C + Si materials were impregnated by liquid (molten) silicon to obtain high-density product with a relative density of 99.0 % and porosity of 0.9%. Silicon impregnation was carried out by saturating the samples through the pores of the SiC + C sacrificial preforms. This method allows to reduce both the dissolution of boron carbide grains in the silicon solution and the formation of the B12(C, Si, B)3 phase. This reduces the fragility of the product and thereby improves the mechanical characteristics of the B4C ceramics.
Авторлар туралы
S. Perevislov
St. Petersburg State Technological Institute (technical university)
Хат алмасуға жауапты Автор.
Email: perevislov@mail.ru
Ресей, St. Petersburg
P. Shcherbak
St. Petersburg State Technological Institute (technical university)
Email: perevislov@mail.ru
Ресей, St. Petersburg
M. Tomkovich
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: perevislov@mail.ru
Ресей, St. Petersburg
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