Voltage-on-Type RTP Pockels Cell for Q-switch of an Er:YAG Laser at 1,617 nm

  • Autores: Zhang F.1, Tang P.1, Wu M.2, Huang B.3, Liu J.2, Qi X.1, Zhao C.3
  • Afiliações:
    1. Hunan Key Laboratory for Micro{Nano Energy Materials and Devices School of Physics and Optoelectronic, Xiangtan University
    2. SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Optoelectronic Engineering, Shenzhen University
    3. Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics, Hunan University
  • Edição: Volume 38, Nº 4 (2017)
  • Páginas: 339-343
  • Seção: Article
  • URL: https://ogarev-online.ru/1071-2836/article/view/248186
  • DOI: https://doi.org/10.1007/s10946-017-9650-8
  • ID: 248186

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Resumo

We report a resonantly diode-pumped electro-optic Q-switched Er:YAG laser operating at 1,617 nm using a voltage-on-type rubidium titanyl phosphate (RTP) Pockels cell as the modulator. The Er:YAG laser operates at a very stable Q-switching mode with a per pulse energy yield of 1.5 mJ and a pulse duration of 114 ns at 1 kHz PRF under an incident pump power of 21.6 W.

Sobre autores

Fubin Zhang

Hunan Key Laboratory for Micro{Nano Energy Materials and Devices School of Physics and Optoelectronic, Xiangtan University

Email: pinghuatang@xtu.edu.cn
República Popular da China, Xiangtan, 411105

Pinghua Tang

Hunan Key Laboratory for Micro{Nano Energy Materials and Devices School of Physics and Optoelectronic, Xiangtan University

Autor responsável pela correspondência
Email: pinghuatang@xtu.edu.cn
República Popular da China, Xiangtan, 411105

Man Wu

SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Optoelectronic Engineering, Shenzhen University

Email: pinghuatang@xtu.edu.cn
República Popular da China, Shenzhen, 518060

Bin Huang

Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics, Hunan University

Email: pinghuatang@xtu.edu.cn
República Popular da China, Changsha, 410082

Jun Liu

SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Optoelectronic Engineering, Shenzhen University

Email: pinghuatang@xtu.edu.cn
República Popular da China, Shenzhen, 518060

Xiang Qi

Hunan Key Laboratory for Micro{Nano Energy Materials and Devices School of Physics and Optoelectronic, Xiangtan University

Email: pinghuatang@xtu.edu.cn
República Popular da China, Xiangtan, 411105

Chujun Zhao

Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics, Hunan University

Email: pinghuatang@xtu.edu.cn
República Popular da China, Changsha, 410082

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