Complexation of gallium(III) nitrate with 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetrakis(methylenephosphonic acid)
- Авторлар: Tsebrikova G.S.1, Barsamian R.T.2, Solov´ev V.P.1, Kudryashova Z.A.1,2, Baulin V.E.1,3, Wang Y.J.4, Tsivadze A.Y.1
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Мекемелер:
- Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences
- Russian Technological University, Lomonosov Moscow State University of Fine Chemical Technologies
- Institute of Physiologically Active Compounds, Russian Academy of Sciences
- School of Materials Science and Engineering, Harbin Institute of Technology
- Шығарылым: Том 67, № 12 (2018)
- Беттер: 2184-2187
- Бөлім: Full Articles
- URL: https://ogarev-online.ru/1066-5285/article/view/243213
- DOI: https://doi.org/10.1007/s11172-018-2352-8
- ID: 243213
Дәйексөз келтіру
Аннотация
Eight dissociation constants of 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetrakis (methylene phosphonic acid) (DOTMP, H8L) were determined for the first time by potentiometric titration in water using the CHEMEQUI program. The stability constants of Ga3+ complexes with deprotonated forms of DOTMP were determined. The stability constant of the Ga3+ complex with the fully deprotonated DOTMP ligand, lg KML equal to 27.8, is higher than the corresponding constant for the Ga3+ complex with 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid (DOTA), the ligand most widely used in radiopharmacy; it is also higher than the constant for the Ga3+ complex with plasma protein transferrin, which makes the DOTMP ligand very promising for the use in radiopharmacy.
Авторлар туралы
G. Tsebrikova
Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: tsebrikova@yandex.ru
Ресей, Build. 4, 31 Leninsky prosp., Moscow, 119071
R. Barsamian
Russian Technological University, Lomonosov Moscow State University of Fine Chemical Technologies
Email: tsebrikova@yandex.ru
Ресей, 78 prosp. Vernadskogo, Moscow, 119454
V. Solov´ev
Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences
Email: tsebrikova@yandex.ru
Ресей, Build. 4, 31 Leninsky prosp., Moscow, 119071
Z. Kudryashova
Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences; Russian Technological University, Lomonosov Moscow State University of Fine Chemical Technologies
Email: tsebrikova@yandex.ru
Ресей, Build. 4, 31 Leninsky prosp., Moscow, 119071; 78 prosp. Vernadskogo, Moscow, 119454
V. Baulin
Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences; Institute of Physiologically Active Compounds, Russian Academy of Sciences
Email: tsebrikova@yandex.ru
Ресей, Build. 4, 31 Leninsky prosp., Moscow, 119071; 1 Severnyi proezd, Chernogolovka, Moscow Region, 142432
Y. Wang
School of Materials Science and Engineering, Harbin Institute of Technology
Email: tsebrikova@yandex.ru
ҚХР, 92 West Dashi st., Harbin, 150001
A. Tsivadze
Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences
Email: tsebrikova@yandex.ru
Ресей, Build. 4, 31 Leninsky prosp., Moscow, 119071
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