Broadband MMIC Digital Step Attenuator Based on Silicon-Germanium Technology
- 作者: Dobush I.M.1, Sheyerman F.I.1, Babak L.I.1
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隶属关系:
- Tomsk State University of Control Systems and Radioelectronics
- 期: 卷 61, 编号 11 (2019)
- 页面: 2113-2120
- 栏目: Physics of Semiconductors and Dielectrics
- URL: https://ogarev-online.ru/1064-8887/article/view/241269
- DOI: https://doi.org/10.1007/s11182-019-01644-9
- ID: 241269
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详细
The article describes circuit schematics, features and design methodology of microwave integrated digital step attenuators (DSAs) based on SiGe technology (SiGe BiCMOS). The measured characteristics of the designed 0.1–4.5 GHz microwave monolithic integrated circuit (MMIC) DSA with a parallel and serial control driver are presented. The DSA bitness is 6 bit, attenuation range is 30 dB with a 1-dB step, and input power at the 1 dB gain compression is no less than 14 dBm. In addition to the wide bandwidth, advantages of the MMIC DSA are a good input and output matching, as well as low consumption current. The MMIC DSA can be used in microwave transmitters and receivers for different applications, including ones that are based on the systemon-a-chip concept.
作者简介
I. Dobush
Tomsk State University of Control Systems and Radioelectronics
Email: feodor.sheyerman@gmail.com
俄罗斯联邦, Tomsk
F. Sheyerman
Tomsk State University of Control Systems and Radioelectronics
编辑信件的主要联系方式.
Email: feodor.sheyerman@gmail.com
俄罗斯联邦, Tomsk
L. Babak
Tomsk State University of Control Systems and Radioelectronics
Email: feodor.sheyerman@gmail.com
俄罗斯联邦, Tomsk
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