Soliton Perturbations of the Charged Dislocation Core in a Semiconductor Crystal
- 作者: Gestrin S.G.1,2, Shchukina E.V.1
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隶属关系:
- Yuri Gagarin State Technical University of Saratov
- Saratov State Agrarian University named after N. I. Vavilov
- 期: 卷 59, 编号 12 (2017)
- 页面: 2143-2150
- 栏目: Article
- URL: https://ogarev-online.ru/1064-8887/article/view/237738
- DOI: https://doi.org/10.1007/s11182-017-1026-6
- ID: 237738
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详细
We consider the wave processes in a hole gas inside an electric field created by the charge distribution of donors and acceptors near a negatively charged dislocation in a semiconductor crystal of n-type. It is shown that the solution of the Korteweg–de Vries equation describes solitary waves propagating along the axis of the Read’s cylinder. The soliton velocity is estimated for the values of physical parameters characterizing the semiconductor crystal and the region near the dislocation.
作者简介
S. Gestrin
Yuri Gagarin State Technical University of Saratov; Saratov State Agrarian University named after N. I. Vavilov
编辑信件的主要联系方式.
Email: gestrin.s@yandex.ru
俄罗斯联邦, Saratov; Saratov
E. Shchukina
Yuri Gagarin State Technical University of Saratov
Email: gestrin.s@yandex.ru
俄罗斯联邦, Saratov
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