The Effect of the Mode of Gas Preionization on the Parameters of Runaway Electrons in High-Pressure Discharges
- 作者: Kozhevnikov V.Y.1,2, Kozyrev A.V.1,2, Semeniuk N.S.1,2
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隶属关系:
- National Research Tomsk State University
- Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
- 期: 卷 59, 编号 12 (2017)
- 页面: 1981-1988
- 栏目: Plasma Physics
- URL: https://ogarev-online.ru/1064-8887/article/view/237657
- DOI: https://doi.org/10.1007/s11182-017-1004-z
- ID: 237657
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详细
The results of theoretical modeling of the process of formation of a nanosecond discharge in a coaxial discharge gap filled with a high-pressure gas are presented. Two cardinally different evolution scenarios of the nanosecond discharge are addressed: A) in a uniformly volume pre-ionized gas medium and B) in a strongly spatially-nonuniform initially-ionized region near the cathode with a small curvature radius. Relying on the minimal mathematical model of a high-voltage discharge and the description of the physical kinetics of runaway electrons, it is shown using the Boltzmann kinetic equation that the amplitude and duration of a current pulse of runaway electrons and their energy spectrum strongly depend on the mode of gas preionization in the gap. In particular, the other conditions being equal, near-cathode initiation gives rise to the generation of a large group of low-energy runaway electrons within the late current-switching stage. The volume-homogeneous gas preionization can reduce the number of fast electrons by nearly two orders of magnitude compared to the regime without preionization.
作者简介
V. Kozhevnikov
National Research Tomsk State University; Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
编辑信件的主要联系方式.
Email: vasily.y.kozhevnikov@ieee.org
俄罗斯联邦, Tomsk; Tomsk
A. Kozyrev
National Research Tomsk State University; Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: vasily.y.kozhevnikov@ieee.org
俄罗斯联邦, Tomsk; Tomsk
N. Semeniuk
National Research Tomsk State University; Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: vasily.y.kozhevnikov@ieee.org
俄罗斯联邦, Tomsk; Tomsk
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