Автор туралы ақпарат

Sidorov, G. Yu.

Шығарылым	Бөлім	Атауы	Файл
Том 60, № 2 (2017)	Article	Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd_xHg_1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates
Том 60, № 11 (2018)	Article	Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al₂O₃ Insulator
Том 62, № 5 (2019)	Article	Admittance Characteristics of nBn Structures Based on Hgcdte Grown by Molecular Beam Epitaxy
Том 62, № 6 (2019)	Physics of Semiconductors and Dielectrics	Current-Voltage Characteristics of nBn Structures Based on Mercury Cadmium Telluride Epitaxial Films