Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures
- 作者: Iakovleva N.I.1, Boltar K.O.1,2, Sednev M.V.1, Patrashin A.I.1, Irodov N.A.1
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隶属关系:
- OAO NPO Orion
- Moscow Institute of Physics and Technology (State University)
- 期: 卷 61, 编号 3 (2016)
- 页面: 319-323
- 栏目: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://ogarev-online.ru/1064-2269/article/view/196835
- DOI: https://doi.org/10.1134/S1064226916030207
- ID: 196835
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详细
SWIR ADP 320 × 256 FPAs based on p–i–n photodiodes in InGaAs heterostructures have been developed and investigated. The typical InGaAs/InP PIN heterostructures are formed by Metal Organic Vapor Phase Epitaxy (MOVPE) on n+ type InP substrates. The InGaAs/InP PIN photodiodes performance have been estimated by measuring current-voltage characteristics. APD arrays are designed using a mesa-passivated avalanche photodiode device array of p–i–n junctions in heterostructure with common absorption and multiplication regions. The optimal operating point for managing avalanche application depended on various factors has been started at 15 V bias and the multiplication coefficient was of 2–4.
作者简介
N. Iakovleva
OAO NPO Orion
编辑信件的主要联系方式.
Email: orion@orion-ir.ru
俄罗斯联邦, Kosinskaya ul. 9, Moscow, 111538
K. Boltar
OAO NPO Orion; Moscow Institute of Physics and Technology (State University)
Email: orion@orion-ir.ru
俄罗斯联邦, Kosinskaya ul. 9, Moscow, 111538; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700
M. Sednev
OAO NPO Orion
Email: orion@orion-ir.ru
俄罗斯联邦, Kosinskaya ul. 9, Moscow, 111538
A. Patrashin
OAO NPO Orion
Email: orion@orion-ir.ru
俄罗斯联邦, Kosinskaya ul. 9, Moscow, 111538
N. Irodov
OAO NPO Orion
Email: orion@orion-ir.ru
俄罗斯联邦, Kosinskaya ul. 9, Moscow, 111538
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