Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures


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SWIR ADP 320 × 256 FPAs based on pin photodiodes in InGaAs heterostructures have been developed and investigated. The typical InGaAs/InP PIN heterostructures are formed by Metal Organic Vapor Phase Epitaxy (MOVPE) on n+ type InP substrates. The InGaAs/InP PIN photodiodes performance have been estimated by measuring current-voltage characteristics. APD arrays are designed using a mesa-passivated avalanche photodiode device array of pin junctions in heterostructure with common absorption and multiplication regions. The optimal operating point for managing avalanche application depended on various factors has been started at 15 V bias and the multiplication coefficient was of 2–4.

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N. Iakovleva

OAO NPO Orion

编辑信件的主要联系方式.
Email: orion@orion-ir.ru
俄罗斯联邦, Kosinskaya ul. 9, Moscow, 111538

K. Boltar

OAO NPO Orion; Moscow Institute of Physics and Technology (State University)

Email: orion@orion-ir.ru
俄罗斯联邦, Kosinskaya ul. 9, Moscow, 111538; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700

M. Sednev

OAO NPO Orion

Email: orion@orion-ir.ru
俄罗斯联邦, Kosinskaya ul. 9, Moscow, 111538

A. Patrashin

OAO NPO Orion

Email: orion@orion-ir.ru
俄罗斯联邦, Kosinskaya ul. 9, Moscow, 111538

N. Irodov

OAO NPO Orion

Email: orion@orion-ir.ru
俄罗斯联邦, Kosinskaya ul. 9, Moscow, 111538

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