Отправить статью по E-mail The Influence of Strains on the Ferromagnetic Resonance Spectrum of Submicron Yttrium Iron Garnet Films Obtained by Ion Beam Sputtering
- Авторы: Vysotskii S.L.1,2, Khivintsev Y.V.1,2, Kozhevnikov A.V.1, Sakharov V.K.1, Filimonov Y.A.1,2,3, Stognii A.I.4, Novitskii N.N.4, Nikitov S.A.5,2
-
Учреждения:
- Kotelnikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences
- Chernyshevsky National Research State University
- Yuri Gagarin State Technical University of Saratov
- Scientific and Practical Materials Research Centre, National Academy of Sciences of Belarus
- Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- Выпуск: Том 64, № 12 (2019)
- Страницы: 1398-1406
- Раздел: Radio Phenomena in Solids and Plasma
- URL: https://ogarev-online.ru/1064-2269/article/view/201660
- DOI: https://doi.org/10.1134/S1064226919100140
- ID: 201660
Цитировать
Открытый доступ
Доступ предоставлен
Только для подписчиков
Аннотация
The influence of strains on the ferromagnetic resonance (FMR) spectrum of submicron yttrium iron garnet (YIG) films produced by the ion beam sputtering on gadolinium-gallium garnet (GGG) and silicon (Si) substrates is explored. It is shown that the strain influence is displayed as a frequency shift of the absorption maximum in the FMR spectrum. The results indicate that the studied YIG/GGG and YIG/Si films have an efficient magnetoelastic coupling of the spin and elastic subsystems, which suggests that ion beam sputtering of YIG films on GGG and Si substructures can be a promising technique for production of straintronic devices.
Об авторах
S. Vysotskii
Kotelnikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences; Chernyshevsky National Research State University
Автор, ответственный за переписку.
Email: vysotsl@gmail.com
Россия, Saratov, 410019; Saratov, 410012
Yu. Khivintsev
Kotelnikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences; Chernyshevsky National Research State University
Email: vysotsl@gmail.com
Россия, Saratov, 410019; Saratov, 410012
A. Kozhevnikov
Kotelnikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences
Email: vysotsl@gmail.com
Россия, Saratov, 410019
V. Sakharov
Kotelnikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences
Email: vysotsl@gmail.com
Россия, Saratov, 410019
Yu. Filimonov
Kotelnikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences; Chernyshevsky National Research State University; Yuri Gagarin State Technical University of Saratov
Email: vysotsl@gmail.com
Россия, Saratov, 410019; Saratov, 410012; Saratov, 410054
A. Stognii
Scientific and Practical Materials Research Centre, National Academy of Sciences of Belarus
Email: vysotsl@gmail.com
Белоруссия, Minsk, 220072
N. Novitskii
Scientific and Practical Materials Research Centre, National Academy of Sciences of Belarus
Email: vysotsl@gmail.com
Белоруссия, Minsk, 220072
S. Nikitov
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences; Chernyshevsky National Research State University
Email: vysotsl@gmail.com
Россия, Moscow, 125009; Saratov, 410012
Дополнительные файлы
