Focal plane arrays mesastructures formation by ion-beam etching
- Авторы: Sednev M.V.1, Boltar K.O.1,2, Sharonov Y.P.1, Lopukhin A.A.1
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Учреждения:
- OAO NPO Orion
- Moscow Institute of Physics and Technology (State University)
- Выпуск: Том 61, № 3 (2016)
- Страницы: 324-327
- Раздел: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://ogarev-online.ru/1064-2269/article/view/196838
- DOI: https://doi.org/10.1134/S1064226916030153
- ID: 196838
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Аннотация
The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etching rate reduces with reduction in the width of the unmasked gap. The effect of reflection of the ion beam from vertical walls formed during etching may be used for fabrication of submicron separating mesaregions.
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Об авторах
M. Sednev
OAO NPO Orion
Автор, ответственный за переписку.
Email: orion@orion-ir.ru
Россия, ul. Kosinskaya 9, Moscow, 111538
K. Boltar
OAO NPO Orion; Moscow Institute of Physics and Technology (State University)
Email: orion@orion-ir.ru
Россия, ul. Kosinskaya 9, Moscow, 111538; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700
Yu. Sharonov
OAO NPO Orion
Email: orion@orion-ir.ru
Россия, ul. Kosinskaya 9, Moscow, 111538
A. Lopukhin
OAO NPO Orion
Email: orion@orion-ir.ru
Россия, ul. Kosinskaya 9, Moscow, 111538
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