Epitaxial structures for InGaAs/InP avalanche photodiodes

A. K. Budtolaev; P. E. Khakuashev; I. V. Chinareva; P. V. Gorlachuk; M. A. Ladugin; A. A. Marmaluk; Yu. L. Ryaboshtan; I. V. Yarotskaya

doi:10.1134/S1064226917030056

Epitaxial structures for InGaAs/InP avalanche photodiodes

Autores: Budtolaev A.K.¹, Khakuashev P.E.¹, Chinareva I.V.¹, Gorlachuk P.V.², Ladugin M.A.², Marmaluk A.A.², Ryaboshtan Y.L.², Yarotskaya I.V.²
Afiliações:
1. Orion Research and Production Association
2. Polyus Research Institute
Edição: Volume 62, Nº 3 (2017)
Páginas: 304-308
Seção: Articles from the Russian Journal Prikladnaya Fizika
URL: https://ogarev-online.ru/1064-2269/article/view/198117
DOI: https://doi.org/10.1134/S1064226917030056
ID: 198117

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The influence of parameters of the MOS hydride epitaxy on structural and electrophysical characteristics of InGaAs/InP heterostructures is studied experimentally. The chosen parameters are used to grow device structures and fabricate planar avalanche photodiodes based on them. The results of measuring of their photoelectrical properties suggest that the developed structures are suitable for fabrication of commercial planar avalanche photodiodes.