Effect of the Spread of the Depths of p–n Junction on the Parameters of InGaAs/InP Avalanche Photodiodes

Abstract

Permissible deviations of the diffusion depth and selection of the optimal type of epitaxial structures for fabrication of the InGaAs/InP avalanche photodiodes are considered. Two types of structures are presented: (i) with uniform doping of the multiplication region (triangular field) and (ii) with peak doping of the multiplication region (rectangular field). Such epitaxial structures are grown with the aid of the MOC-hydride epitaxy. In both structures, the p–n junction is formed in the n-InP multiplication region using zinc diffusion. The structure of the first type can be used at p–n-junction depths of х₀ = 1.77–2.18 μm and working voltages of 56–75 V. The permissible spread is Δх₀ = 0.41 μm (±10%). The structure of the second type can be used at p–n-junction depths of х₀ = 2.50–3.40 μm and working voltages of 49–61 V. The permissible spread is Δх₀ = 0.90 μm (±15%).