An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method

O. S. Talarico; V. V. Tregulov; V. G. Litvinov; A. V. Ermachikhin

doi:10.1134/S1063785016110213

An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method

Авторы: Talarico O.S.¹^,2, Tregulov V.V.³, Litvinov V.G.⁴, Ermachikhin A.V.⁴
Учреждения:
1. Lebedev Physical Institute
2. National Research Nuclear University “MEPhI,”
3. Esenin Ryazan State University
4. Ryazan State Radio Engineering University
Выпуск: Том 42, № 11 (2016)
Страницы: 1107-1109
Раздел: Article
URL: https://ogarev-online.ru/1063-7850/article/view/201943
DOI: https://doi.org/10.1134/S1063785016110213
ID: 201943

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Optical transmission spectrum and temperature dependence of the current–voltage characteristics of a plane-parallel rubrene wafer prepared by the vapor transport method have been investigated. The band gap is determined from the optical transmission spectrum. It is established that the current–voltage characteristics can be explained within the framework of the model of space-charge-limited currents. The current-flow processes are significantly affected by traps.