Normally off transistors based on in situ passivated AlN/GaN heterostructures

Аннотация

A molecular beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with an ultrathin AlN barrier has been developed. Based on these structures, normally off transistors with maximum current density of about 1 A/mm, saturation voltage of about 1 V, transconductance up to 350 mS/mm, and breakdown voltage above 60 V have been fabricated, in which the drain and gate current collapse phenomena are virtually absent.