Отправить статью по E-mail Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs Converters Irradiated on p- and n-Sides
- Авторы: Matveev B.A.1, Ratushnyi V.I.2, Rybal’chenko A.Y.2
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Учреждения:
- Ioffe Institute, Russian Academy of Sciences
- Volgodonsk Engineering Technical Institute, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Выпуск: Том 64, № 8 (2019)
- Страницы: 1164-1167
- Раздел: Solid State Electronics
- URL: https://ogarev-online.ru/1063-7842/article/view/203972
- DOI: https://doi.org/10.1134/S1063784219080140
- ID: 203972
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Аннотация
The basic characteristics of thermophotovoltaic heterostructure p-InAsSbP/n-InAs converters have been simulated. The converters have been designed so that a contact to the irradiated p-InAsSbP layer has a limited area or, in the flip-chip design, radiation is introduced through a contact-free part of the n+-InAs substrate. It has been shown that the design features of the converter influence its efficiency and active region temperature.
Об авторах
B. Matveev
Ioffe Institute, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: ioffeled@mail.ru
Россия, St. Petersburg, 194021
V. Ratushnyi
Volgodonsk Engineering Technical Institute, National Research Nuclear University MEPhI(Moscow Engineering Physics Institute)
Email: ioffeled@mail.ru
Россия, Volgodonsk, Rostov oblast, 347360
A. Rybal’chenko
Volgodonsk Engineering Technical Institute, National Research Nuclear University MEPhI(Moscow Engineering Physics Institute)
Email: ioffeled@mail.ru
Россия, Volgodonsk, Rostov oblast, 347360
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