Analytical Model of Atomic Layer Deposition of Films on 3D Structures with High Aspect Ratios

Аннотация

A theoretical model has been suggested that makes it possible to predict the profile of a film deposited on the walls of a high aspect ratio structure (trench) by atomic layer deposition versus the deposition parameters. In addition, the model allows one to calculate the optimal time of precursor doping that provides the conformal coating of the trench walls. The deposition of films with different thicknesses has been described by an approximant that includes two asymptotical deposition conditions with different relationships between the precursor molecule sticking coefficient and aspect ratio of the trench.