| Шығарылым |
Атауы |
Файл |
| Том 53, № 4 (2019) |
Power Conversion Efficiencies of Perovskite and Dye-Sensitized Solar Cells under Various Solar Radiation Intensities |
(Eng)
|
|
Nikolskaia A., Kozlov S., Vildanova M., Shevaleevskiy O.
|
| Том 53, № 4 (2019) |
Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes |
(Eng)
|
|
Dobrov V., Kozlovski V., Mescheryakov A., Usychenko V., Chernova A., Shabunina E., Shmidt N.
|
| Том 53, № 4 (2019) |
Large-Amplitude Shock Electromagnetic Wave in a Nonlinear Transmission Line Based on a Distributed Semiconductor Diode |
(Eng)
|
|
Kyuregyan A.
|
| Том 53, № 4 (2019) |
High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects |
(Eng)
|
|
Kyuregyan A.
|
| Том 53, № 4 (2019) |
Inhomogeneous Injection and Heat-Transfer Processes in Reversely Switched Dynistors Operating in the Pulse-Frequency Repetition Modes with a Limited Heat Sink |
(Eng)
|
|
Gorbatyuk A., Ivanov B.
|
| Том 53, № 4 (2019) |
Formation of Porous Silicon by Nanopowder Sintering |
(Eng)
|
|
Astrova E., Voronkov V., Nashchekin A., Parfeneva A., Lozhkina D., Tomkovich M., Kukushkina Y.
|
| Том 53, № 3 (2019) |
Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures |
(Eng)
|
|
Kabalnov Y., Trufanov A., Obolensky S.
|
| Том 53, № 3 (2019) |
EMF Induced in a p–n Junction under a Strong Microwave Field and Light |
(Eng)
|
|
Gulyamov G., Erkaboev U., Sharibaev N., Gulyamov A.
|
| Том 53, № 3 (2019) |
Subnanosecond Avalanche Switching Simulations of n+–n–n+ Silicon Structures |
(Eng)
|
|
Podolska N., Rodin P.
|
| Том 53, № 3 (2019) |
Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package) |
(Eng)
|
|
Ivanov P., Potapov A., Samsonova T.
|
| Том 53, № 2 (2019) |
Features of MIS Structures with Samarium Fluoride on Silicon and Germanium Substrates |
(Eng)
|
|
Shalimova M., Sachuk N.
|
| Том 53, № 2 (2019) |
Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent |
(Eng)
|
|
Grebenshchikova E., Sidorov V., Shutaev V., Yakovlev Y.
|
| Том 53, № 1 (2019) |
On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect |
(Eng)
|
|
Goldman E., Nabiev A., Naryshkina V., Chucheva G.
|
| Том 53, № 1 (2019) |
Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis |
(Eng)
|
|
Khrypunov G., Meriuts A., Shelest T., Khrypunov M.
|
| Том 53, № 1 (2019) |
Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell |
(Eng)
|
|
Svintsov A., Yakimov E., Dorokhin M., Demina P., Kuznetsov Y.
|
| Том 53, № 1 (2019) |
Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well |
(Eng)
|
|
Bochkareva N., Ivanov A., Klochkov A., Shreter Y.
|
| Том 53, № 1 (2019) |
Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure |
(Eng)
|
|
Kuzmichev N., Vasyutin M.
|
| Том 53, № 1 (2019) |
Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor |
(Eng)
|
|
Kulikov N., Popov V.
|
| Том 52, № 16 (2018) |
Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications |
(Eng)
|
|
Ajayan J., Ravichandran T., Mohankumar P., Prajoon P., Pravin J., Nirmal D.
|
| Том 52, № 16 (2018) |
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode |
(Eng)
|
|
Rabehi A., Bideux L., Gruzza B., Monier G., Hatem-Kacha A., Guermoui M., Ziane A., Akkal B., Benamara Z., Amrani M., Robert-Goumet C.
|
| Том 52, № 16 (2018) |
Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices |
(Eng)
|
|
Seyidov M., Suleymanov R., Şale Y., Kandemir B.
|
| Том 52, № 13 (2018) |
Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection |
(Eng)
|
|
Aleksandrov O., Ageev A., Zolotarev S.
|
| Том 52, № 13 (2018) |
Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs |
(Eng)
|
|
Tyaginov S., Linten D., Vexler M., Hellings G., Grill A., Chasin A., Jech M., Kaczer B., Makarov A., Grasser T.
|
| Том 52, № 13 (2018) |
nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 μm |
(Eng)
|
|
Kulikov V., Maslov D., Sabirov A., Solodkov A., Dudin A., Katsavets N., Kogan I., Shukov I., Chaly V.
|
| Том 52, № 13 (2018) |
GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm) |
(Eng)
|
|
Khvostikov V., Sorokina S., Potapovich N., Levin R., Marichev A., Timoshina N., Pushnyi B.
|
| Нәтижелер 198 - 26/50 |
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