Microwave Magnetic Field Coupling with Nitrogen-Vacancy Center Ensembles in Diamond with High Homogeneity
- Autores: Zhang N.1, Zhang C.1, Xu L.1, Ding M.1, Quan W.1, Tang Z.2, Yuan H.1
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Afiliações:
- School of Instrumentation and Opto-electronics Engineering, Beihang University
- Department of Electronic Engineering, East China Normal University
- Edição: Volume 47, Nº 6 (2016)
- Páginas: 589-599
- Seção: Article
- URL: https://ogarev-online.ru/0937-9347/article/view/247468
- DOI: https://doi.org/10.1007/s00723-016-0777-5
- ID: 247468
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Resumo
Electron spin resonance measurements with nitrogen-vacancy (NV) center ensembles in diamond are strongly dependent on a uniform microwave magnetic field. Three different types of microwave resonators are used and are well coupled with the spin ensembles at 2.87 GHz for zero-field splitting of the NV centers. The magnitude and the uniformity of both the horizontal and vertical magnetic fields are extracted and analyzed within a \(1\times 1\times 0.5\) mm3 volume on a diamond sample surface, and the results indicate that the field homogeneity is up to 200 times better than that of the traditional copper wire microwave delivery model. The horizontal magnetic field magnitude homogeneity is better than 5 % over an area of 1 mm2 on the thin film diamond sample with NV ensembles. The average Rabi oscillation frequency is estimated to be 2.3 MHz per 1 W of microwave input power upon strong coherent coupling between the resonators and the spin ensembles. The effect of the nonuniform microwave magnetic field on the spin signal is also discussed. The approach used here will find widespread application in microwave coupling with spin ensembles in thin films.
Sobre autores
Ning Zhang
School of Instrumentation and Opto-electronics Engineering, Beihang University
Email: hengyuan@buaa.edu.cn
República Popular da China, Beijing
Chen Zhang
School of Instrumentation and Opto-electronics Engineering, Beihang University
Email: hengyuan@buaa.edu.cn
República Popular da China, Beijing
Lixia Xu
School of Instrumentation and Opto-electronics Engineering, Beihang University
Email: hengyuan@buaa.edu.cn
República Popular da China, Beijing
Ming Ding
School of Instrumentation and Opto-electronics Engineering, Beihang University
Email: hengyuan@buaa.edu.cn
República Popular da China, Beijing
Wei Quan
School of Instrumentation and Opto-electronics Engineering, Beihang University
Email: hengyuan@buaa.edu.cn
República Popular da China, Beijing
Zheng Tang
Department of Electronic Engineering, East China Normal University
Email: hengyuan@buaa.edu.cn
República Popular da China, Shanghai
Heng Yuan
School of Instrumentation and Opto-electronics Engineering, Beihang University
Autor responsável pela correspondência
Email: hengyuan@buaa.edu.cn
República Popular da China, Beijing
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