Optical properties and electronic structure of BiTeCl and BiTeBr compounds
- 作者: Makhnev A.A.1, Nomerovannaya L.V.1, Kuznetsova T.V.1,2, Tereshchenko O.E.3,4, Kokh K.A.4,5
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隶属关系:
- Mikheev Institute of Physics of Metals, Ural Branch
- Ural Federal University
- Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Sobolev Institute of Geology and Mineralogy, Siberian Branch
- 期: 卷 121, 编号 3 (2016)
- 页面: 364-370
- 栏目: Condensed-Matter Spectroscopy
- URL: https://ogarev-online.ru/0030-400X/article/view/164990
- DOI: https://doi.org/10.1134/S0030400X16090137
- ID: 164990
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详细
Optical properties of BiTeCl and BiTeBr compounds with a strong Rashba spin–orbit coupling are studied in the 0.08–5.0 eV range using the optical ellipsometry method. Fundamental characteristics of the electronic structure are obtained. Similarly to BiTeI, spectra of the imaginary part of dielectric permittivity constant ε2(E) in the energy interval between the plasma edge and the threshold of an intense interband absorption (0.7 eV in BiTeCl and 0.6 eV in BiTeBr) display a fine structure of electronic transitions at 0.25 and 0.55 eV in BiTeCl and 0.20 and 0.50 eV in BiTeBr. These features are assigned to electronic transitions between the bulk conduction zones split by the Rashba spin–orbit interaction. The parameters of the electronic structure of BiTeCl and BiTeBr are compared with the BiTeI compound that was studied earlier. In the BiTeCl–BiTeBr–BiTeI row, the absorption edge and main features of the fundamental absorption exhibit a shift to low energies.
作者简介
A. Makhnev
Mikheev Institute of Physics of Metals, Ural Branch
编辑信件的主要联系方式.
Email: almakhnev@imp.uran.ru
俄罗斯联邦, Yekaterinburg, 620990
L. Nomerovannaya
Mikheev Institute of Physics of Metals, Ural Branch
Email: almakhnev@imp.uran.ru
俄罗斯联邦, Yekaterinburg, 620990
T. Kuznetsova
Mikheev Institute of Physics of Metals, Ural Branch; Ural Federal University
Email: almakhnev@imp.uran.ru
俄罗斯联邦, Yekaterinburg, 620990; Yekaterinburg, 620002
O. Tereshchenko
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: almakhnev@imp.uran.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
K. Kokh
Novosibirsk State University; Sobolev Institute of Geology and Mineralogy, Siberian Branch
Email: almakhnev@imp.uran.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
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