Angular Dependences of the Intensity of the Raman Light Scattering on Polaritons in a Gallium Phosphide Crystal
- Autores: Igo A.V.1
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Afiliações:
- Ulyanovsk State University
- Edição: Volume 127, Nº 2 (2019)
- Páginas: 225-230
- Seção: Spectroscopy of Condensed States
- URL: https://ogarev-online.ru/0030-400X/article/view/166057
- DOI: https://doi.org/10.1134/S0030400X19080125
- ID: 166057
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Resumo
Raman light scattering on phonons and polaritons is measured in a gallium phosphide sample. An unfocused beam of a 532-nm single-mode laser was used for excitation. A scattered radiation was collected using a mobile mirror of a small diameter, which allowed us to measure spectra of scattered light in a 0.6°–8° range of scattering angles with a total angular spread of 0.4°. For different crystallographic directions, intensities of polarized components of the Raman light scattering on longitudinal, transverse phonons and polaritons were measured in the region of a strong dispersion of the polaritonic branch for three fixed axial scattering angles. Components of scattering on longitudinal optical phonons and polaritons have a strong dependence on a crystallographic direction, as predicted by theory, and the component of scattering on transverse optical phonons did not depend on a crystallographic direction. It was found that the intensity of scattering on transverse optical phonons correlates with a width of a spectral line of scattering on polariton. A mechanism explaining this correlation is proposed.
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Sobre autores
A. Igo
Ulyanovsk State University
Autor responsável pela correspondência
Email: igoalexander@mail.ru
Rússia, Ulyanovsk, 432063
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