Enviar artigo por via de e-mail The Effect of Pulsed Laser Radiation on a Si Layer with a High Dose of Implanted Ag+ Ions
- Autores: Batalov R.I.1, Vorobev V.V.2, Nuzhdin V.I.1, Valeev V.F.1, Bizyaev D.A.1, Bukharaev A.A.1, Bayazitov R.M.1, Osin Y.N.2, Ivlev G.D.3, Stepanov A.L.1
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Afiliações:
- Zavoisky Kazan Physical-Technical Institute, Federal Research Center “Kazan Scientific Center of Russian Academy of Sciences,”
- Interdisciplinary Center “Analytical Microscopy,” Kazan Federal University
- Belarusian State University
- Edição: Volume 125, Nº 4 (2018)
- Páginas: 571-577
- Seção: Plasmonics
- URL: https://ogarev-online.ru/0030-400X/article/view/165824
- DOI: https://doi.org/10.1134/S0030400X18100065
- ID: 165824
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Resumo
With the purpose of creating a thin composite layer of Ag:Si containing Ag nanoparticles (NPs), the effect of a nanosecond pulse produced by ruby laser (λ = 0.694 µm) on single-crystal c-Si implanted with a high dose of Ag+ ions is studied. The pulsed laser annealing (PLA) is carried out with an energy density exceeding the melting threshold of amorphous а-Si (W ≥ 1.2 J/cm2). During the PLA, temporal dynamics of reflectivity R(t) of probing laser radiation (λ = 1.064 µm) from the Ag:Si layer is explored and compared to data on the melt existence time obtained by the computer simulation. The morphology of the surface, crystallinity, and spectral optical reflection R(λ) of Ag:Si layers subject to PLA are studied. PLA is found to cause melting and subsequent crystallization of the implanted а-Si with ion-synthesized Ag NPs. In addition, a decrease of the surface roughness from 9 to 3–4 nm and redistribution of Ag NP sizes into two fractions—fine (5–15 nm) and larger (40–60 nm)—are observed. The weakening of plasmon intensity Ag NPs in Si (λmax = 835 nm) is observed in R(λ) spectra of an Ag:Si layer after PLA as compared with the initial implanted surface. This weakening may be caused by a decrease in concentration of Ag atoms in the immediate proximity to the surface as a result of Ag impurity partial diffusion within the melted layer, as well as Ag partial evaporation during the PLA.
Sobre autores
R. Batalov
Zavoisky Kazan Physical-Technical Institute, Federal Research Center“Kazan Scientific Center of Russian Academy of Sciences,”
Autor responsável pela correspondência
Email: batalov@kfti.knc.ru
Rússia, Kazan, 420029
V. Vorobev
Interdisciplinary Center “Analytical Microscopy,” Kazan Federal University
Email: batalov@kfti.knc.ru
Rússia, Kazan, 420000
V. Nuzhdin
Zavoisky Kazan Physical-Technical Institute, Federal Research Center“Kazan Scientific Center of Russian Academy of Sciences,”
Email: batalov@kfti.knc.ru
Rússia, Kazan, 420029
V. Valeev
Zavoisky Kazan Physical-Technical Institute, Federal Research Center“Kazan Scientific Center of Russian Academy of Sciences,”
Email: batalov@kfti.knc.ru
Rússia, Kazan, 420029
D. Bizyaev
Zavoisky Kazan Physical-Technical Institute, Federal Research Center“Kazan Scientific Center of Russian Academy of Sciences,”
Email: batalov@kfti.knc.ru
Rússia, Kazan, 420029
A. Bukharaev
Zavoisky Kazan Physical-Technical Institute, Federal Research Center“Kazan Scientific Center of Russian Academy of Sciences,”
Email: batalov@kfti.knc.ru
Rússia, Kazan, 420029
R. Bayazitov
Zavoisky Kazan Physical-Technical Institute, Federal Research Center“Kazan Scientific Center of Russian Academy of Sciences,”
Email: batalov@kfti.knc.ru
Rússia, Kazan, 420029
Yu. Osin
Interdisciplinary Center “Analytical Microscopy,” Kazan Federal University
Email: batalov@kfti.knc.ru
Rússia, Kazan, 420000
G. Ivlev
Belarusian State University
Email: batalov@kfti.knc.ru
Belarus, Minsk, 220030
A. Stepanov
Zavoisky Kazan Physical-Technical Institute, Federal Research Center“Kazan Scientific Center of Russian Academy of Sciences,”
Email: batalov@kfti.knc.ru
Rússia, Kazan, 420029
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