Luminescence of Ga2O3 Crystals Excited with a Runaway Electron Beam


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

The spectra and amplitude–time characteristics of the radiation of studied Sn and Fe-doped Ga2O3 crystals excited with a runaway electron beam and an excilamp with a wavelength of 222 nm were investigated. The main contribution to the luminescence of samples in the region of 280–900 nm under excitation with a beam was shown to be made by cathodoluminescence. In the Fe-doped crystal, a new cathodeand photoluminescence band was detected within a wavelength range of 650–850 nm. In the Sn-doped crystal, Vavilov–Cherenkov radiation was detected in the region of 280–300 nm using a monochromator and a photomultiplier.

Sobre autores

A. Burachenko

Institute of High-Current Electronics, Siberian Branch

Autor responsável pela correspondência
Email: bag@loi.hcei.tsc.ru
Rússia, Tomsk, 634055

D. Beloplotov

Institute of High-Current Electronics, Siberian Branch

Email: bag@loi.hcei.tsc.ru
Rússia, Tomsk, 634055

I. Prudaev

National Research Tomsk State University

Email: bag@loi.hcei.tsc.ru
Rússia, Tomsk, 634050

D. Sorokin

Institute of High-Current Electronics, Siberian Branch

Email: bag@loi.hcei.tsc.ru
Rússia, Tomsk, 634055

V. Tarasenko

Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University

Email: bag@loi.hcei.tsc.ru
Rússia, Tomsk, 634055; Tomsk, 634050

O. Tolbanov

National Research Tomsk State University

Email: bag@loi.hcei.tsc.ru
Rússia, Tomsk, 634050

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Ltd., 2017