The Optimal Pair of Rydberg Alkali-Metal Atoms in the Nonsymmetric Penning Ionization Processes
- Авторлар: Mazalam A.1, Michulis K.2,3, Beterov I.I.4,5, Bezuglov N.N.1,4, Klyucharev A.N.1, Ekers A.6
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Мекемелер:
- St. Petersburg State University
- University of Latvia, Institute of Atomic Physics and Spectroscopy
- National Research Nuclear University MEPhI
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Computer, Electrical, and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology
- Шығарылым: Том 127, № 3 (2019)
- Беттер: 375-384
- Бөлім: Spectroscopy and Physics of Atoms and Molecules
- URL: https://ogarev-online.ru/0030-400X/article/view/166078
- DOI: https://doi.org/10.1134/S0030400X19090200
- ID: 166078
Дәйексөз келтіру
Аннотация
Features of Penning ionization in cold gaseous media of Rydberg alkali-metal atoms have been investigated. In contrast to the hydrogen atom, the corresponding autoionization widths exhibit a strong (by orders of magnitude) dependence on the orbital quantum numbers of the atoms involved in the long-range dipole–dipole interaction. An important feature of Penning ionization is the nontrivial dependence of its efficiency on the Rydberg particle size. For all types of alkali-metal atoms, the optimal highly nonsymmetric configurations of Rydberg pairs have been found that lead to the explosive (by several orders of magnitude) intensification of the free electron formation by means of the Penning ionization processes. This property makes Penning ionization an important means of forming primary charged particles during the cold Rydberg plasma formation. The numerical data for pairs of potassium atoms are reported that demonstrate a significant effect of the Förster resonance on the values of the Penning ionization rate constants.
Негізгі сөздер
Авторлар туралы
Alaa Mazalam
St. Petersburg State University
Email: nikolay.bezuglov@gmail.com
Ресей, St. Petersburg, 199034
K. Michulis
University of Latvia, Institute of Atomic Physics and Spectroscopy; National Research Nuclear University MEPhI
Email: nikolay.bezuglov@gmail.com
Латвия, Riga, LV-1586; Moscow, 115409
I. Beterov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: nikolay.bezuglov@gmail.com
Ресей, Novosibirsk, 630090 ; Novosibirsk, 630090
N. Bezuglov
St. Petersburg State University; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: nikolay.bezuglov@gmail.com
Ресей, St. Petersburg, 199034 ; Novosibirsk, 630090
A. Klyucharev
St. Petersburg State University
Email: nikolay.bezuglov@gmail.com
Ресей, St. Petersburg, 199034
A. Ekers
Computer, Electrical, and Mathematical Science and Engineering Division,King Abdullah University of Science and Technology
Email: nikolay.bezuglov@gmail.com
Сауд Арабиясы, Thuwal, 23955-6900
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