Rearrangement of the Structure of Paratellurite Crystals in a Near-Surface Layer Caused by the Migration of Charge Carriers in an External Electric Field


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The process of formation of surface structures in a paratellurite crystal (α-TeO2) in an external electric field has been studied by in situ X-ray diffraction (XRD) measurements. This process is reversible and its dynamics (duration of tens of minutes) corresponds to the formation of a screening layer near the insulator–metal interface owing to the counter migration of oxygen ions and vacancies in the external electric field. The formation of domains has been observed in the experiment as the broadening and splitting of the XRD curve and is explained by mechanical stresses that appear in the high electric field near the surface in view of the piezoelectric effect and are responsible for a ferroelectric α–β phase transition. A change in the lattice parameter near the anode (surface of the crystal with a positive external charge) has been detected simultaneously. This change is due to the local rearrangement of the crystal structure because of the inflow of oxygen ions in this region and outflow of oxygen vacancies.

作者简介

A. Kulikov

Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics; National Research Center Kurchatov Institute

编辑信件的主要联系方式.
Email: ontonic@gmail.com
俄罗斯联邦, Moscow, 119333; Moscow, 123098

A. Blagov

Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics; National Research Center Kurchatov Institute

Email: ontonic@gmail.com
俄罗斯联邦, Moscow, 119333; Moscow, 123098

N. Marchenkov

Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics; National Research Center Kurchatov Institute

Email: ontonic@gmail.com
俄罗斯联邦, Moscow, 119333; Moscow, 123098

V. Lomonov

Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics

Email: ontonic@gmail.com
俄罗斯联邦, Moscow, 119333

A. Vinogradov

Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics

Email: ontonic@gmail.com
俄罗斯联邦, Moscow, 119333

Yu. Pisarevsky

Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics; National Research Center Kurchatov Institute

Email: ontonic@gmail.com
俄罗斯联邦, Moscow, 119333; Moscow, 123098

M. Kovalchuk

Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics; National Research Center Kurchatov Institute

Email: ontonic@gmail.com
俄罗斯联邦, Moscow, 119333; Moscow, 123098

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Inc., 2018