Steps of the Giant Terahertz Photoconductance of a Tunneling Point Contact
- Autores: Tkachenko O.A.1, Tkachenko V.A.1,2,3, Baksheev D.G.2, Kvon Z.D.1,2
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Novosibirsk State Technical University
- Edição: Volume 108, Nº 6 (2018)
- Páginas: 396-401
- Seção: Condensed Matter
- URL: https://ogarev-online.ru/0021-3640/article/view/161308
- DOI: https://doi.org/10.1134/S0021364018180133
- ID: 161308
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Resumo
The photoresponse of the conductance of a tunneling quantum point contact to irradiation in the frequency range of 0.5–1.7 THz has been simulated within the theory of photon-assisted tunneling. The simulation has shown that the dependences of the conductance on the Fermi energy exhibit steps corresponding to transitions with the absorption of one, two, or three photons to channels near the top of the tunnel barrier. Under experimentally achievable conditions, the ratio of the photoconductance to the dark value on these steps can reach several orders of magnitude.
Sobre autores
O. Tkachenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Autor responsável pela correspondência
Email: otkach@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Tkachenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University
Email: otkach@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630073
D. Baksheev
Novosibirsk State University
Email: otkach@isp.nsc.ru
Rússia, Novosibirsk, 630090
Z. Kvon
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: otkach@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
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