X-ray reflectivity and photoelectron spectroscopy of superlattices with silicon nanocrystals

Resumo

The structural properties and features of the chemical composition of SiO_xN_y/SiO₂, SiO_xN_y/Si₃N₄, and SiN_x/Si₃N₄ multilayer thin films with ultrathin (1–1.5 nm) barrier SiO₂ or Si₃N₄ layers are studied. The films have been prepared by plasma chemical vapor deposition and have been annealed at a temperature of 1150°С for the formation of silicon nanocrystals in the SiO_xN_y or SiN_x silicon-rich layers with a nominal thickness of 5 nm. The period of superlattices in the studied samples has been estimated by X-ray reflectivity. The phase composition of superlattices has been studied by X-ray electron spectroscopy using the decomposition of photoelectron spectra of the Si 2p, N 1s, and O 1s levels into components corresponding to different charge states of atoms.