AlInAs quantum dots
- Autores: Gaisler A.V.1, Derebezov I.A.1, Gaisler V.A.1,2,3, Dmitriev D.V.1, Toropov A.I.1, Kozhukhov A.S.1, Shcheglov D.V.1, Latyshev A.V.1,3, Aseev A.L.1
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State Technical University
- Novosibirsk State University
- Edição: Volume 105, Nº 2 (2017)
- Páginas: 103-109
- Seção: Condensed Matter
- URL: https://ogarev-online.ru/0021-3640/article/view/160059
- DOI: https://doi.org/10.1134/S0021364017020096
- ID: 160059
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Resumo
A system of quantum dots on the basis of AlxIn1-xAs/AlyGa1-y As solid solutions has been studied. The usage of broadband AlxIn1-x solid solutions as the basis of quantum dots makes it possible to expand considerably the spectral emission range into the short-wave region, including the wavelength region near 770 nm being of interest for the design of aerospace systems of quantum cryptography. The optical characteristics of single AlxIn1-xAs quantum dots grown according to the Stranski–Krastanov mechanism are studied by the cryogenic microphotoluminescence method. The fine structure of exciton states of quantum dots is studied in the wavelength region near 770 nm. It is shown that the splitting of exciton states is comparable with the natural width of exciton lines, which is of great interest for the design of emitters of pairs of entangled photons on the basis of AlxAs1-x quantum dots.
Sobre autores
A. Gaisler
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Autor responsável pela correspondência
Email: alex729@isp.nsc.ru
Rússia, Novosibirsk, 630090
I. Derebezov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: alex729@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Gaisler
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University; Novosibirsk State University
Email: alex729@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630092; Novosibirsk, 630090
D. Dmitriev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: alex729@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Toropov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: alex729@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Kozhukhov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: alex729@isp.nsc.ru
Rússia, Novosibirsk, 630090
D. Shcheglov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: alex729@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: alex729@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
A. Aseev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: alex729@isp.nsc.ru
Rússia, Novosibirsk, 630090
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