Thermopower of a Two-Dimensional Semimetal in a HgTe Quantum Well


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Аннотация

The thermopower in a two-dimensional semimetal existing in HgTe quantum wells 18–21 nm thick has been studied experimentally and theoretically for the first time. It has been found theoretically and experimentally that the thermopower has two components—diffusion and phonon-drag—and that the second component is several times larger than the first. It has been concluded that the electron–hole scattering plays an important role in both mechanisms of the thermopower.

Авторлар туралы

G. Gusev

Instituto de Fisica da Universidade de Sao Paulo

Email: eolsh@isp.nsc.ru
Бразилия, Sao Paulo, 135960-170

E. Olshanetsky

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Хат алмасуға жауапты Автор.
Email: eolsh@isp.nsc.ru
Ресей, Novosibirsk, 630090

Z. Kvon

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: eolsh@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090

L. Magarill

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: eolsh@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090

M. Entin

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: eolsh@isp.nsc.ru
Ресей, Novosibirsk, 630090

A. Levin

Instituto de Fisica da Universidade de Sao Paulo

Email: eolsh@isp.nsc.ru
Бразилия, Sao Paulo, 135960-170

N. Mikhailov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: eolsh@isp.nsc.ru
Ресей, Novosibirsk, 630090

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