Thermopower of a Two-Dimensional Semimetal in a HgTe Quantum Well
- Авторлар: Gusev G.M.1, Olshanetsky E.B.2, Kvon Z.D.2,3, Magarill L.I.2,3, Entin M.V.2, Levin A.1, Mikhailov N.N.2
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Мекемелер:
- Instituto de Fisica da Universidade de Sao Paulo
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Шығарылым: Том 107, № 12 (2018)
- Беттер: 789-793
- Бөлім: Condensed Matter
- URL: https://ogarev-online.ru/0021-3640/article/view/161139
- DOI: https://doi.org/10.1134/S0021364018120081
- ID: 161139
Дәйексөз келтіру
Аннотация
The thermopower in a two-dimensional semimetal existing in HgTe quantum wells 18–21 nm thick has been studied experimentally and theoretically for the first time. It has been found theoretically and experimentally that the thermopower has two components—diffusion and phonon-drag—and that the second component is several times larger than the first. It has been concluded that the electron–hole scattering plays an important role in both mechanisms of the thermopower.
Авторлар туралы
G. Gusev
Instituto de Fisica da Universidade de Sao Paulo
Email: eolsh@isp.nsc.ru
Бразилия, Sao Paulo, 135960-170
E. Olshanetsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Хат алмасуға жауапты Автор.
Email: eolsh@isp.nsc.ru
Ресей, Novosibirsk, 630090
Z. Kvon
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: eolsh@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
L. Magarill
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: eolsh@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
M. Entin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: eolsh@isp.nsc.ru
Ресей, Novosibirsk, 630090
A. Levin
Instituto de Fisica da Universidade de Sao Paulo
Email: eolsh@isp.nsc.ru
Бразилия, Sao Paulo, 135960-170
N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: eolsh@isp.nsc.ru
Ресей, Novosibirsk, 630090
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