Multichannel and Multifunctional Frequency-output Sensors of Physical Effects Based on a Universal Field Transistor-type Sensing Element with a Silicon-on-Insulator Structure

A. V. Leonov; A. A. Malykh; V. N. Mordkovich; M. I. Pavlyuk

doi:10.1134/S002044121801027X

Multichannel and Multifunctional Frequency-output Sensors of Physical Effects Based on a Universal Field Transistor-type Sensing Element with a Silicon-on-Insulator Structure

作者: Leonov A.V.¹, Malykh A.A.¹, Mordkovich V.N.¹, Pavlyuk M.I.²
隶属关系:
1. Institute of Microelectronics Technology and High Purity Materials
2. JSC ICC Milandr, Zelonograd
期: 卷 61, 编号 2 (2018)
页面: 299-305
栏目: Laboratory Techniques
URL: https://ogarev-online.ru/0020-4412/article/view/160179
DOI: https://doi.org/10.1134/S002044121801027X
ID: 160179

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详细

It is shown that by using electric-field-controlled transistor-type sensing elements with a siliconon-insulator structure as a basis it is possible to develop multichannel and multifunctional sensors with a controllable frequency output. The sensitivities of the described frequency-output sensors of the magnetic field and temperature are as high as 2.2 kHz/mT and 1.5 kHz/°C, respectively.